Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories

Xiaoli Chen; Ye Zhou; Vellaisamy A L Roy; Su-Ting Han

doi:10.1002/adma.201703950

Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories

Adv Mater. 2018 Jan;30(3). doi: 10.1002/adma.201703950. Epub 2017 Oct 23.

Authors

Xiaoli Chen^{1

2}, Ye Zhou³, Vellaisamy A L Roy⁴, Su-Ting Han¹

Affiliations

¹ College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China.
² Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
³ Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
⁴ Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China.

PMID: 29058796
DOI: 10.1002/adma.201703950

Abstract

Because of current fabrication limitations, miniaturizing nonvolatile memory devices for managing the explosive increase in big data is challenging. Molecular memories constitute a promising candidate for next-generation memories because their properties can be readily modulated through chemical synthesis. Moreover, these memories can be fabricated through mild solution processing, which can be easily scaled up. Among the various materials, polyoxometalate (POM) molecules have attracted considerable attention for use as novel data-storage nodes for nonvolatile memories. Here, an overview of recent advances in the development of POMs for nonvolatile memories is presented. The general background knowledge of the structure and property diversity of POMs is also summarized. Finally, the challenges and perspectives in the application of POMs in memories are discussed.

Keywords: data storage; molecular electronics; nonvolatile memory; polyoxometalates (POMs).

Publication types

Review