Chemical Patterning of High-Mobility Semiconducting 2D Bi2 O2 Se Crystals for Integrated Optoelectronic Devices

Jinxiong Wu; Yujing Liu; Zhenjun Tan; Congwei Tan; Jianbo Yin; Tianran Li; Teng Tu; Hailin Peng

doi:10.1002/adma.201704060

Chemical Patterning of High-Mobility Semiconducting 2D Bi₂ O₂ Se Crystals for Integrated Optoelectronic Devices

Adv Mater. 2017 Nov;29(44). doi: 10.1002/adma.201704060. Epub 2017 Oct 12.

Authors

Jinxiong Wu¹, Yujing Liu¹, Zhenjun Tan², Congwei Tan², Jianbo Yin¹, Tianran Li¹, Teng Tu¹, Hailin Peng¹

Affiliations

¹ Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
² Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.

PMID: 29024159
DOI: 10.1002/adma.201704060

Abstract

Patterning of high-mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next-generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high-mobility semiconducting Bi₂ O₂ Se crystals using dilute H₂ O₂ and protonic mixture acid as efficient etchants. The 2D Bi₂ O₂ Se crystal after chemical etching maintains a high Hall mobility of over 200 cm² V^-1 s^-1 at room temperature. Centimeter-scale well-ordered arrays of 2D Bi₂ O₂ Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi₂ O₂ Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W^-1 at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.

Keywords: 2D Bi2O2Se crystals; chemical etching; high-mobility; integrated devices.