Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon-nanotube-confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single-walled carbon nanotube (SWCNT) and a metal electrode. By using WSe2 and MoS2 , the CCVH can be made into p-type and n-type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe2 CCVH from unipolar to bipolar, and the transition of WSe2 /MoS2 from p-n junction to n-n junction under proper source-drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano-optoelectronics.
Keywords: 2D materials; asymmetric contacts; carbon nanotubes; heterostructures.
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