A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor

Wei Cai; Zhennan Zhu; Jinglin Wei; Zhiqiang Fang; Honglong Ning; Zeke Zheng; Shangxiong Zhou; Rihui Yao; Junbiao Peng; Xubing Lu

doi:10.3390/ma10080972

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor

Materials (Basel). 2017 Aug 21;10(8):972. doi: 10.3390/ma10080972.

Authors

Wei Cai¹, Zhennan Zhu², Jinglin Wei³, Zhiqiang Fang⁴, Honglong Ning⁵, Zeke Zheng⁶, Shangxiong Zhou⁷, Rihui Yao⁸, Junbiao Peng⁹, Xubing Lu¹⁰

Affiliations

¹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. c.w01@mail.scut.edu.cn.
² Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. mszhuzn@mail.scut.edu.cn.
³ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. 201620108095@mail.scut.edu.cn.
⁴ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. fangzq1230@gmail.com.
⁵ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. ninghl@scut.edu.cn.
⁶ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. 201520114219@mail.scut.edu.cn.
⁷ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. earth7788@163.com.
⁸ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. yaorihui@scut.edu.cn.
⁹ Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China. psjbpeng@scut.edu.cn.
¹⁰ Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China. luxubing@scnu.edu.cn.

Abstract

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO₂ films by intentionally increasing the concentration of precursor. The ZrO₂ films not only exhibit a low leakage current density of 10^-6 A/cm² at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm²·V^-1·s^-1 and a I_on/I_off ratio of 10⁶ in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO₂/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness.

Keywords: control thickness; low leakage current density; precursor concentration; solution-processed ZrO2.