Physical, chemical, and optical data of SnS layers and light switching frequency dependent photoresponses

Malkeshkumar Patel; Hong-Sik Kim; Joondong Kim

doi:10.1016/j.dib.2017.07.056

Physical, chemical, and optical data of SnS layers and light switching frequency dependent photoresponses

Data Brief. 2017 Jul 26:14:206-212. doi: 10.1016/j.dib.2017.07.056. eCollection 2017 Oct.

Authors

Malkeshkumar Patel¹, Hong-Sik Kim¹, Joondong Kim¹

Affiliation

¹ Photoelectric and Energy Device Applications Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, South Korea.

Abstract

In this data article, vertically grown SnS layers were investigated. The growth processes of vertical SnS layers were discussed in our article [1]. This data article provides the chemical analysis using the XPS measurements for the SnS sample grown on a Si wafer. Deposition time varying SnS morphology changes were observed by FESEM. The cross-sectional images were achieved to monitor the SnS layer thickness. Refractive index of the grown SnS film was calculated using the reflectance data. A self-operating photoelectric was realized with structuring of SnS layers on the n-type Si wafer. Transient photoresponses were achieved by tuning the switching frequencies.

Keywords: 2D materials; Photodetectors; SnS; Vertical growth; Waferscale.