Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

N V Kryzhanovskaya; E I Moiseev; Yu S Polubavkina; M V Maximov; M M Kulagina; S I Troshkov; Yu M Zadiranov; A A Lipovskii; N V Baidus; A A Dubinov; Z F Krasilnik; A V Novikov; D A Pavlov; A V Rykov; A A Sushkov; D V Yurasov; A E Zhukov

doi:10.1364/OE.25.016754

Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Opt Express. 2017 Jul 10;25(14):16754-16760. doi: 10.1364/OE.25.016754.

Authors

N V Kryzhanovskaya, E I Moiseev, Yu S Polubavkina, M V Maximov, M M Kulagina, S I Troshkov, Yu M Zadiranov, A A Lipovskii, N V Baidus, A A Dubinov, Z F Krasilnik, A V Novikov, D A Pavlov, A V Rykov, A A Sushkov, D V Yurasov, A E Zhukov

PMID: 28789176
DOI: 10.1364/OE.25.016754

Abstract

In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm². Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.