Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

Wenzhi Li; Zhuang Ma; Lihong Gao; Fuchi Wang

doi:10.3390/ma8031176

Preparation and Electrical Properties of La_0.9Sr_0.1TiO_3+δ

Materials (Basel). 2015 Mar 17;8(3):1176-1186. doi: 10.3390/ma8031176.

Authors

Wenzhi Li^{1

2}, Zhuang Ma^{3

4}, Lihong Gao^{5

6}, Fuchi Wang^{7

8}

Affiliations

¹ School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China. liwenzhi0418@163.com.
² National Key Laboratory of Science and Technology on Materials under Shock and Impact, Beijing 100081, China. liwenzhi0418@163.com.
³ School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China. hstrong929@bit.edu.cn.
⁴ National Key Laboratory of Science and Technology on Materials under Shock and Impact, Beijing 100081, China. hstrong929@bit.edu.cn.
⁵ School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China. gaolihong@bit.edu.cn.
⁶ National Key Laboratory of Science and Technology on Materials under Shock and Impact, Beijing 100081, China. gaolihong@bit.edu.cn.
⁷ School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China. wangfuchi@bit.edu.cn.
⁸ National Key Laboratory of Science and Technology on Materials under Shock and Impact, Beijing 100081, China. wangfuchi@bit.edu.cn.

Abstract

La₁_-xSr_xTiO_3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffraction (XRD), scanning electron microscope (SEM), broadband dielectric spectroscopy, impedance spectroscopy and photoconductive measurement were used to characterize the sample. The results show that the values of dielectric parameters (the relative dielectric constant ε_r and dielectric loss tanδ), dependent on temperature, are stable under 350 °C and the value of the relative dielectric constant and dielectric loss are about 52-88 and 6.5 × 10^-3, respectively. Its value of conductivity increases with rise in temperature, which suggests its negative temperature coefficient of the resistance. In addition, the band gap of LST is about 3.39 eV, so it belongs to a kind of wide-band-gap semiconductor materials. All these indicate that LST has anti-interference ability and good dielectric properties. It could have potential applications as an electronic material.

Keywords: La0.9Sr0.1TiO3+δ; band gap; conductivity; dielectric properties.