Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

Takafumi Hayashi; Yuta Kawase; Noriaki Nagata; Takashi Senga; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Takahiro Matsumoto

doi:10.1038/s41598-017-03151-8

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

Sci Rep. 2017 Jun 7;7(1):2944. doi: 10.1038/s41598-017-03151-8.

Authors

Affiliations

¹ Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan. 163434025@ccalumni.meijo-u.ac.jp.
² Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan.
³ Akasaki Research Center, Nagoya University, Nagoya, 464-8603, Japan.
⁴ Graduate School of Design & Architecture, Nagoya City University, Nagoya, 464-0083, Japan.
⁵ Graduate School of Medical Sciences, Nagoya City University, Nagoya, 464-0083, Japan.

Abstract

This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm². A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.

Publication types

Research Support, Non-U.S. Gov't