Filter-based ultralow-frequency Raman measurement down to 2 cm-1 for fast Brillouin spectroscopy measurement

Xue-Lu Liu; He-Nan Liu; Jiang-Bin Wu; Han-Xu Wu; Tao Zhang; Wei-Qian Zhao; Ping-Heng Tan

doi:10.1063/1.4983144

Filter-based ultralow-frequency Raman measurement down to 2 cm^-1 for fast Brillouin spectroscopy measurement

Rev Sci Instrum. 2017 May;88(5):053110. doi: 10.1063/1.4983144.

Authors

Xue-Lu Liu¹, He-Nan Liu¹, Jiang-Bin Wu¹, Han-Xu Wu², Tao Zhang², Wei-Qian Zhao², Ping-Heng Tan¹

Affiliations

¹ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
² Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China.

PMID: 28571441
DOI: 10.1063/1.4983144

Abstract

Simultaneous Stokes and anti-Stokes ultralow-frequency (ULF) Raman measurement down to ∼2 cm^-1 or 60 GHz is realized by a single-stage spectrometer in combination with volume-Bragg-grating-based notch filters. This system reveals its excellent performance by probing Brillouin signal of acoustic phonons in silicon, germanium, gallium arsenide, and gallium nitride. The deduced sound velocity and elastic constants are in good accordance with previous results determined by various methods. This system can shorten the integration time of the Brillouin signal with a good signal-to-noise ratio by more than 2000-fold compared to a Fabry-Perot interferometer (FPI). This study shows how a filter-based ULF Raman system can be used to reliably achieve Brillouin spectroscopy for condensed materials with high sensitivity and high signal-to-noise ratio, stimulating fast Brillouin spectrum measurements to probe acoustic phonons in semiconductors.