Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

Cheng Wei Shih; Albert Chin

doi:10.1038/s41598-017-01231-3

Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

Sci Rep. 2017 Apr 25;7(1):1147. doi: 10.1038/s41598-017-01231-3.

Authors

Cheng Wei Shih¹, Albert Chin²

Affiliations

¹ Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
² Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan. achin@faculty.nctu.edu.tw.

Abstract

High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ _FE ) of 345 cm²/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I _ON /I _OFF ) of 7 × 10⁶, and a low drain-voltage (V_D) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I _ON and I _OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.

Publication types

Research Support, Non-U.S. Gov't