The effectiveness of ion beam planarization (IBP) to reduce surface roughness of diamond turned NiP surfaces was investigated. The surfaces with various spatial wavelengths and depths of turning marks were spray-coated and planarized with broad ion beam. The ion beam planarization was performed at a special angle where the etching rate of photoresist is closely similar to NiP. It is found that the combined process of spray-coating and ion-beam-planarization can effectively reduce the surface roughness of diamond turned NiP. The spatial wavelength and depth of turning marks have limited influence on surface roughness reduction rate. The final surface roughness after ion beam planarization is 30%~40% of the original roughness, irrespective of spatial wavelength and depth of turning marks. Extending planarization time does not alter surface quality after photoresist is etched away. These results show that the IBP is applicable to roughness minimization of diamond turned surfaces.