Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz

B P Sorokin; G M Kvashnin; A S Novoselov; V S Bormashov; A V Golovanov; S I Burkov; V D Blank

doi:10.1016/j.ultras.2017.01.014

Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz

Ultrasonics. 2017 Jul:78:162-165. doi: 10.1016/j.ultras.2017.01.014. Epub 2017 Jan 21.

Authors

B P Sorokin¹, G M Kvashnin², A S Novoselov³, V S Bormashov², A V Golovanov², S I Burkov⁴, V D Blank³

Affiliations

¹ Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation; Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russian Federation. Electronic address: bpsorokin2@rambler.ru.
² Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation.
³ Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation; Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russian Federation.
⁴ Siberian Federal University, 660041 Krasnoyarsk, Russian Federation.

PMID: 28363121
DOI: 10.1016/j.ultras.2017.01.014

Abstract

First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·10¹⁴Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer's acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band.

Keywords: Aluminum nitride; Diamond; HBAR; Piezoelectric layered structure; Quality factor; Quality parameter; UHF acoustic attenuation.

Publication types

Research Support, Non-U.S. Gov't