Rare-metal-free high-performance Ga-Sn-O thin film transistor

Tokiyoshi Matsuda; Kenta Umeda; Yuta Kato; Daiki Nishimoto; Mamoru Furuta; Mutsumi Kimura

doi:10.1038/srep44326

Rare-metal-free high-performance Ga-Sn-O thin film transistor

Sci Rep. 2017 Mar 14:7:44326. doi: 10.1038/srep44326.

Authors

Tokiyoshi Matsuda¹, Kenta Umeda², Yuta Kato², Daiki Nishimoto², Mamoru Furuta³, Mutsumi Kimura^{2

4}

Affiliations

¹ Innovative Materials and Processing Research Center, Ryukoku University, Japan HRC205, 1-5, Seta Oe-cho, Otsu, Shiga, 520-2194, Japan.
² Department of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Japan.
³ School of Environmental Science and Engineering, Kochi University of Technology, Japan.
⁴ Joint Research Centre for Science and Technology, Ryukoku University, Japan.

Abstract

Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm²/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.

Publication types

Research Support, Non-U.S. Gov't