Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Amanuel M Berhane; Kwang-Yong Jeong; Zoltán Bodrog; Saskia Fiedler; Tim Schröder; Noelia Vico Triviño; Tomás Palacios; Adam Gali; Milos Toth; Dirk Englund; Igor Aharonovich

doi:10.1002/adma.201605092

Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Adv Mater. 2017 Mar;29(12). doi: 10.1002/adma.201605092. Epub 2017 Feb 9.

Affiliations

¹ School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.
² Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.
³ Institute for Solid State Physics and Optics, Wigner RCP of the Hungarian Academy of Sciences, Budapest, POB 49, H-1525, Hungary.

PMID: 28181313
DOI: 10.1002/adma.201605092

Abstract

Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.

Keywords: cubic inclusions; gallium nitride wafer; narrow linewidth; point defects; single-photon sources.