An Accurate Value for the Absorption Coefficient of Silicon at 633 nm

Jon Geist; A Russell Schaefer; Jun-Feng Song; Yun Hsia Wang; Edward F Zalewski

doi:10.6028/jres.095.043

An Accurate Value for the Absorption Coefficient of Silicon at 633 nm

J Res Natl Inst Stand Technol. 1990 Sep-Oct;95(5):549-558. doi: 10.6028/jres.095.043.

Authors

Jon Geist¹, A Russell Schaefer², Jun-Feng Song¹, Yun Hsia Wang¹, Edward F Zalewski¹

Affiliations

¹ National Institute of Standards and Technology, Gaithersburg, MD 20899.
² Science Applications International Corporation, 4161 Campus Point Court, San Diego, CA 92121.

Abstract

High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm^-1 and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.

Keywords: HeNe; absorption coefficient; etch stop; extinction coefficient; high accuracy; silicon.