Atomic-layer-deposited La2O3 films were grown on Si with different O3 pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O3 formed the solid SiO2 interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO3 on increasing the O3 pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La2O3, during which most of the La2O3 phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.