Rational Design of Two-Dimensional Metallic and Semiconducting Spintronic Materials Based on Ordered Double-Transition-Metal MXenes

Liang Dong; Hemant Kumar; Babak Anasori; Yury Gogotsi; Vivek B Shenoy

doi:10.1021/acs.jpclett.6b02751

Rational Design of Two-Dimensional Metallic and Semiconducting Spintronic Materials Based on Ordered Double-Transition-Metal MXenes

J Phys Chem Lett. 2017 Jan 19;8(2):422-428. doi: 10.1021/acs.jpclett.6b02751. Epub 2017 Jan 5.

Authors

Liang Dong¹, Hemant Kumar¹, Babak Anasori², Yury Gogotsi², Vivek B Shenoy¹

Affiliations

¹ Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.
² Department of Materials Science & Engineering and A.J. Drexel Nanomaterials Institute, Drexel University , Philadelphia, Pennsylvania 19104, United States.

PMID: 28036178
DOI: 10.1021/acs.jpclett.6b02751

Abstract

Two-dimensional (2D) materials that display robust ferromagnetism have been pursued intensively for nanoscale spintronic applications, but suitable candidates have not been identified. Here we present theoretical predictions on the design of ordered double-transition-metal MXene structures to achieve such a goal. On the basis of the analysis of electron filling in transition-metal cations and first-principles simulations, we demonstrate robust ferromagnetism in Ti₂MnC₂T_x monolayers regardless of the surface terminations (T = O, OH, and F), as well as in Hf₂MnC₂O₂ and Hf₂VC₂O₂ monolayers. The high magnetic moments (3-4 μB/unit cell) and high Curie temperatures (495-1133 K) of these MXenes are superior to those of existing 2D ferromagnetic materials. Furthermore, semimetal-to-semiconductor and ferromagnetic-to-antiferromagnetic phase transitions are predicted to occur in these materials in the presence of small or moderate tensile in-plane strains (0-3%), which can be externally applied mechanically or internally induced by the choice of transition metals.