Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition

Sang Wook Han; Youngsin Park; Young Hun Hwang; Soyoung Jekal; Manil Kang; Wang G Lee; Woochul Yang; Gun-Do Lee; Soon Cheol Hong

doi:10.1038/srep38730

Electron beam-formed ferromagnetic defects on MoS₂ surface along 1 T phase transition

Sci Rep. 2016 Dec 15:6:38730. doi: 10.1038/srep38730.

Authors

Sang Wook Han¹, Youngsin Park², Young Hun Hwang³, Soyoung Jekal¹, Manil Kang¹, Wang G Lee², Woochul Yang⁴, Gun-Do Lee⁵, Soon Cheol Hong¹

Affiliations

¹ Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea.
² School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
³ School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
⁴ Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea.
⁵ Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea.

Abstract

1 T phase incorporation into 2H-MoS₂ via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS₂ surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS₂ surface provides suitable ways for the low-dimensional device applications.

Publication types

Research Support, Non-U.S. Gov't