Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-x Inx N Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

Shigefusa F Chichibu; Kazunobu Kojima; Akira Uedono; Yoshitaka Sato

doi:10.1002/adma.201603644

Defect-Resistant Radiative Performance of m-Plane Immiscible Al_1-_x In_x N Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201603644. Epub 2016 Nov 24.

Authors

Shigefusa F Chichibu¹, Kazunobu Kojima¹, Akira Uedono², Yoshitaka Sato³

Affiliations

¹ Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan.
² Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan.
³ Futaba Corporation, 1080 Yabutsuka, Chosei-mura, Chosei-gun, Chiba, 299-4395, Japan.

PMID: 27882616
DOI: 10.1002/adma.201603644

Abstract

Planar vacuum-fluorescent-display devices emitting polarized UV-C, blue, and green light are demonstrated using immiscible Al_1-_x In_x N nanostructures grown in nonpolar m-directions. Despite the presence of high concentration of nonradiative recombination centers, the Al_1-_x In_x N nanostructures emit polarized light with the luminescence lifetimes of 22-32 ps at 300 K. This defect-resistant radiative performance suggests supernormal localized characteristics of electron-hole pairs.

Keywords: deep-ultraviolet light; immiscible alloys; localization; nonradiative recombination; point defects; polarized light emitters; radiative recombination.