Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium

Miaofei Meng; Xiying Ma

doi:10.1186/s11671-016-1729-6

Improving the Photoelectric Characteristics of MoS₂ Thin Films by Doping Rare Earth Element Erbium

Nanoscale Res Lett. 2016 Dec;11(1):513. doi: 10.1186/s11671-016-1729-6. Epub 2016 Nov 22.

Authors

Miaofei Meng¹, Xiying Ma²

Affiliations

¹ Suzhou University of Science and Technology, Kerui Road No. 1, Gaoxin section, Suzhou, 215011, Jiangsu, China.
² Suzhou University of Science and Technology, Kerui Road No. 1, Gaoxin section, Suzhou, 215011, Jiangsu, China. maxy@mail.usts.edu.cn.

Abstract

We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS₂ (Er: MoS₂) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS₂ films were studied. The results indicate that doping makes the crystallinity of MoS₂ films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS₂ films increase about one order of magnitude, and the current-voltage (I-V) and the photoelectric response characteristics of the Er:MoS₂/Si heterojunction increase significantly. Moreover, Er-doped MoS₂ films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS₂ with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

Keywords: Chemical vapor deposition; Er doping; Light absorption; MoS2 film; Photoelectric characteristics; Photoluminescence.