Ferroelectric Control of Organic/Ferromagnetic Spinterface

Shiheng Liang; Hongxin Yang; Huaiwen Yang; Bingshan Tao; Abdelhak Djeffal; Mairbek Chshiev; Weichuan Huang; Xiaoguang Li; Anthony Ferri; Rachel Desfeux; Stéphane Mangin; Daniel Lacour; Michel Hehn; Olivier Copie; Karine Dumesnil; Yuan Lu

doi:10.1002/adma.201603638

Ferroelectric Control of Organic/Ferromagnetic Spinterface

Adv Mater. 2016 Dec;28(46):10204-10210. doi: 10.1002/adma.201603638. Epub 2016 Oct 6.

Authors

Affiliations

¹ Institut Jean Lamour, CNRS-Université de Lorraine, UMR 7198, BP 239, 54506, Vandœuvre, France.
² Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France CEA, INAC-SPINTEC F-38000 Grenoble, France CNRS, SPINTEC, F-38000, Grenoble, France.
³ Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China.
⁴ Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et Chimie du Solide (UCCS), F-62300, Lens, France.

PMID: 27709711
DOI: 10.1002/adma.201603638

Abstract

Organic multiferroic tunnel junctions based on La_0.6 Sr_0.4 MnO₃ /poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.

Keywords: ferroelectrics; magneto-resistance; multiferroic tunnel junctions; spinterface.