Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2 from Chemical Vapor Deposition

Lin Zhou; Ahmad Zubair; Ziqiang Wang; Xu Zhang; Fangping Ouyang; Kai Xu; Wenjing Fang; Keiji Ueno; Ju Li; Tomás Palacios; Jing Kong; Mildred S Dresselhaus

doi:10.1002/adma.201602687

Synthesis of High-Quality Large-Area Homogenous 1T' MoTe₂ from Chemical Vapor Deposition

Adv Mater. 2016 Nov;28(43):9526-9531. doi: 10.1002/adma.201602687. Epub 2016 Sep 13.

Authors

Lin Zhou¹, Ahmad Zubair¹, Ziqiang Wang², Xu Zhang¹, Fangping Ouyang^{1

3}, Kai Xu⁴, Wenjing Fang¹, Keiji Ueno⁵, Ju Li^{2

6}, Tomás Palacios¹, Jing Kong¹, Mildred S Dresselhaus^{1

7}

Affiliations

¹ Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
² Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
³ School of Physics Science and Technology, Central South University, Changsha, 410083, China.
⁴ Research Institute of Petroleum Processing, SINOPEC, Beijing, 100083, China.
⁵ Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan.
⁶ Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
⁷ Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

PMID: 27620354
DOI: 10.1002/adma.201602687

Abstract

High-quality large-area few-layer 1T' MoTe₂ films with high homogeneity are synthesized by the controlled tellurization of MoO₃ film. The Mo precursor plays a key role in determining the quality and morphology of the 1T' MoTe₂ . Furthermore, the amount of Te strongly influences the phase of the MoTe₂ . The growth method paves the way toward the scalable production of 1T' MoTe₂ -based applications.

Keywords: 2D materials; chemical vapor deposition; molybdenum ditelluride; transition-metal dichalcogenides.