Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors

Inyeal Lee; Servin Rathi; Dongsuk Lim; Lijun Li; Jinwoo Park; Yoontae Lee; Kyung Soo Yi; Krishna P Dhakal; Jeongyong Kim; Changgu Lee; Gwan-Hyoung Lee; Young Duck Kim; James Hone; Sun Jin Yun; Doo-Hyeb Youn; Gil-Ho Kim

doi:10.1002/adma.201601949

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂ /MoS₂ Heterostructure for Ambipolar Field-Effect Transistors

Adv Mater. 2016 Nov;28(43):9519-9525. doi: 10.1002/adma.201601949. Epub 2016 Sep 13.

Authors

Inyeal Lee¹, Servin Rathi¹, Dongsuk Lim¹, Lijun Li¹, Jinwoo Park¹, Yoontae Lee¹, Kyung Soo Yi², Krishna P Dhakal³, Jeongyong Kim³, Changgu Lee⁴, Gwan-Hyoung Lee⁵, Young Duck Kim⁶, James Hone⁶, Sun Jin Yun⁷, Doo-Hyeb Youn⁷, Gil-Ho Kim¹

Affiliations

¹ Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
² Department of Physics, Pusan National University, Busan, 46241, Korea.
³ Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.
⁴ Department of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
⁵ Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea.
⁶ Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
⁷ ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.

PMID: 27619888
DOI: 10.1002/adma.201601949

Abstract

An ambipolar dual-channel field-effect transistor (FET) with a WSe₂ /MoS₂ heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS₂ and WSe₂ , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe₂ /MoS₂ dual-channel FET.

Keywords: MoS2; WSe2; dual-channel; heterostructures; photoresponse.