Auger and surface recombinations are major drawbacks that deteriorate a photon-to-electron conversion efficiencies in nanostructured (NS) Si solar cells. As an alternative to conventional frontside nanostructuring, we report how backside nanostructuring is beneficial for carrier collection during photovoltaic operation that utilizes a 50-μm-thin wafer. Ultrathin (4.3-nm-thin) zinc oxide was also effective for providing passivated tunneling contacts at the nanostructured backsides, which led to the enhancement of 24% in power conversion efficiency.