Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity

Dain Lee; Euyheon Hwang; Youngbin Lee; Yongsuk Choi; Jong Su Kim; Seungwoo Lee; Jeong Ho Cho

doi:10.1002/adma.201603571

Multibit MoS₂ Photoelectronic Memory with Ultrahigh Sensitivity

Adv Mater. 2016 Nov;28(41):9196-9202. doi: 10.1002/adma.201603571. Epub 2016 Aug 26.

Authors

Dain Lee¹, Euyheon Hwang^{1

2}, Youngbin Lee¹, Yongsuk Choi¹, Jong Su Kim¹, Seungwoo Lee^{1

3}, Jeong Ho Cho^{4

5}

Affiliations

¹ SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
² Department of Physics, Sungkyunkwan University, Suwon, 440-746, Korea.
³ School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
⁴ SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea. jhcho94@skku.edu.
⁵ School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea. jhcho94@skku.edu.

PMID: 27562539
DOI: 10.1002/adma.201603571

Abstract

A novel multibit MoS₂ photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS₂ flakes. The MoS₂ photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10⁷ , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10⁴ s.

Keywords: MoS2; memory devices, floating gates; multilevel programs; nonvolatile photoelectronic memory.