Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

Kleopatra Emmanouil Aretouli; Dimitra Tsoutsou; Polychronis Tsipas; Jose Marquez-Velasco; Sigiava Aminalragia Giamini; Nicolaos Kelaidis; Vassilis Psycharis; Athanasios Dimoulas

doi:10.1021/acsami.6b02933

Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

ACS Appl Mater Interfaces. 2016 Sep 7;8(35):23222-9. doi: 10.1021/acsami.6b02933. Epub 2016 Aug 25.

Authors

Kleopatra Emmanouil Aretouli^{1

2}, Dimitra Tsoutsou¹, Polychronis Tsipas¹, Jose Marquez-Velasco^{1

3}, Sigiava Aminalragia Giamini^{1

2}, Nicolaos Kelaidis¹, Vassilis Psycharis¹, Athanasios Dimoulas¹

Affiliations

¹ Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
² University of Athens , Department of Physics, Section of Solid State Physics, 15684 Athens, Greece.
³ National Technical University of Athens , Department of Physics, 15780 Athens, Greece.

PMID: 27537619
DOI: 10.1021/acsami.6b02933

Abstract

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

Keywords: 2D semiconductors; SnSe2; WSe2; molecular beam epitaxy; tunneling field effect transistors; van der Waals heterostructures.