Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Yaxu Gu; Wanqi Jie; Linglong Li; Yadong Xu; Yaodong Yang; Jie Ren; Gangqiang Zha; Tao Wang; Lingyan Xu; Yihui He; Shouzhi Xi

doi:10.1016/j.micron.2016.06.001

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Micron. 2016 Sep:88:48-53. doi: 10.1016/j.micron.2016.06.001. Epub 2016 Jun 16.

Authors

Yaxu Gu¹, Wanqi Jie², Linglong Li³, Yadong Xu⁴, Yaodong Yang³, Jie Ren⁵, Gangqiang Zha¹, Tao Wang¹, Lingyan Xu¹, Yihui He¹, Shouzhi Xi¹

Affiliations

¹ State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, PR China; Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an 710072, PR China.
² State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, PR China; Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an 710072, PR China. Electronic address: jwq@nwpu.edu.cn.
³ Multidisciplinary Material Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, PR China.
⁴ State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, PR China; Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an 710072, PR China. Electronic address: xyd220@nwpu.edu.cn.
⁵ State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, PR China.

PMID: 27376976
DOI: 10.1016/j.micron.2016.06.001

Abstract

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

Keywords: Bias dependent; CdZnTe; Electrical property; Kelvin probe force microscopy; Te inclusion.