Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

Xiuling Jia; Dunjun Chen; Liu Bin; Hai Lu; Rong Zhang; Youdou Zheng

doi:10.1038/srep27728

Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

Sci Rep. 2016 Jun 9:6:27728. doi: 10.1038/srep27728.

Authors

Xiuling Jia^{1

2}, Dunjun Chen¹, Liu Bin¹, Hai Lu¹, Rong Zhang¹, Youdou Zheng¹

Affiliations

¹ Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
² Chuzhou Vocational and Technical College, Chuzhou 239000, P. R. China.

Abstract

A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(-1) to 2 mg L(-1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(-1) and 1.97 μg L(-1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.

Publication types

Research Support, Non-U.S. Gov't