Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Qi Hang Qin; Laura Äkäslompolo; Noora Tuomisto; Lide Yao; Sayani Majumdar; Jaianth Vijayakumar; Arianna Casiraghi; Sampo Inkinen; Binbin Chen; Asier Zugarramurdi; Martti Puska; Sebastiaan van Dijken

doi:10.1002/adma.201504519

Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Adv Mater. 2016 Aug;28(32):6852-9. doi: 10.1002/adma.201504519. Epub 2016 Jun 1.

Affiliations

¹ NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
² COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.

PMID: 27248832
DOI: 10.1002/adma.201504519

Abstract

Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.

Keywords: Tsu-Esaki tunneling current formula; ferroelectric tunnel junctions; oxygen vacancy migration; resistive switching; transition metal oxides.