Sub-nanosecond Yb:KLu(WO4)2 microchip laser

P Loiko; J M Serres; X Mateos; K Yumashev; A Yasukevich; V Petrov; U Griebner; M Aguiló; F Díaz

doi:10.1364/OL.41.002620

Sub-nanosecond Yb:KLu(WO₄)₂ microchip laser

Opt Lett. 2016 Jun 1;41(11):2620-3. doi: 10.1364/OL.41.002620.

Authors

P Loiko, J M Serres, X Mateos, K Yumashev, A Yasukevich, V Petrov, U Griebner, M Aguiló, F Díaz

PMID: 27244429
DOI: 10.1364/OL.41.002620

Abstract

A diode-pumped Yb:KLu(WO₄)₂ microchip laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 μJ at a pulse repetition frequency of 12.4 kHz. The output beam had an excellent circular profile with M²<1.05. Yb:KLu(WO₄)₂ is very promising for ultrathin sub-ns microchip lasers.