Stress Characterization of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method

Abstract

We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET.

Keywords: 4H-SiC metal–oxide–semiconductor field-effect transistor (MOSFET); Finite element method; Raman spectroscopy; Silicon dioxide films; Stress characterization.