Layer Engineering of 2D Semiconductor Junctions

Yongmin He; Ali Sobhani; Sidong Lei; Zhuhua Zhang; Yongji Gong; Zehua Jin; Wu Zhou; Yingchao Yang; Yuan Zhang; Xifan Wang; Boris Yakobson; Robert Vajtai; Naomi J Halas; Bo Li; Erqing Xie; Pulickel Ajayan

doi:10.1002/adma.201600278

Layer Engineering of 2D Semiconductor Junctions

Adv Mater. 2016 Jul;28(25):5126-32. doi: 10.1002/adma.201600278. Epub 2016 May 2.

Authors

Yongmin He^{1

2}, Ali Sobhani³, Sidong Lei¹, Zhuhua Zhang^{1

4}, Yongji Gong⁵, Zehua Jin¹, Wu Zhou⁶, Yingchao Yang¹, Yuan Zhang¹, Xifan Wang¹, Boris Yakobson¹, Robert Vajtai¹, Naomi J Halas³, Bo Li¹, Erqing Xie², Pulickel Ajayan¹

Affiliations

¹ Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
² School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China.
³ Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA.
⁴ State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China.
⁵ Department of Chemistry, Rice University, Houston, TX, 77005, USA.
⁶ Materials Science & Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA.

PMID: 27136275
DOI: 10.1002/adma.201600278

Abstract

A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.

Keywords: 2D semiconductor junctions; layer engineering; multilayer MoSe2; photovoltaic effects; rectification effects.