Note: Near infrared interferometric silicon wafer metrology

M S Choi; H M Park; K N Joo

doi:10.1063/1.4948292

Note: Near infrared interferometric silicon wafer metrology

Rev Sci Instrum. 2016 Apr;87(4):046106. doi: 10.1063/1.4948292.

Authors

M S Choi¹, H M Park¹, K N Joo¹

Affiliation

¹ Department of Photonic Engineering, Chosun University, Gwangju 61452, South Korea.

PMID: 27131722
DOI: 10.1063/1.4948292

Abstract

In this investigation, two near infrared (NIR) interferometric techniques for silicon wafer metrology are described and verified with experimental results. Based on the transparent characteristic of NIR light to a silicon wafer, the fiber based spectrally resolved interferometry can measure the optical thickness of the wafer and stitching low coherence scanning interferometry can reconstruct entire surfaces of the wafer.

Publication types

Research Support, Non-U.S. Gov't