Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

Fangfang Cui; Cong Wang; Xiaobo Li; Gang Wang; Kaiqiang Liu; Zhou Yang; Qingliang Feng; Xing Liang; Zhongyue Zhang; Shengzhong Liu; Zhibin Lei; Zonghuai Liu; Hua Xu; Jin Zhang

doi:10.1002/adma.201600722

Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

Adv Mater. 2016 Jul;28(25):5019-24. doi: 10.1002/adma.201600722. Epub 2016 Apr 28.

Authors

Fangfang Cui¹, Cong Wang¹, Xiaobo Li¹, Gang Wang², Kaiqiang Liu³, Zhou Yang¹, Qingliang Feng⁴, Xing Liang¹, Zhongyue Zhang², Shengzhong Liu¹, Zhibin Lei¹, Zonghuai Liu¹, Hua Xu¹, Jin Zhang⁴

Affiliations

¹ School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
² School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, P. R. China.
³ School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China.
⁴ Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

PMID: 27121002
DOI: 10.1002/adma.201600722

Abstract

Anisotropic 2D layered material rhenium disulfide (ReS2 ) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460-900 °C with high efficiency.

Keywords: 2D anisotropic materials; Re-Te binary eutectic; epitaxial growth; high crystal quality; rhenium disulphide (ReS2).