Real-Space Visualization of Energy Loss and Carrier Diffusion in a Semiconductor Nanowire Array Using 4D Electron Microscopy

Adv Mater. 2016 Jul;28(25):5106-11. doi: 10.1002/adma.201600202. Epub 2016 Apr 25.

Abstract

A breakthrough in the development of 4D scanning ultrafast electron microscopy is described for real-time and space imaging of secondary electron energy loss and carrier diffusion on the surface of an array of nanowires as a model system, providing access to a territory that is beyond the reach of either static electron imaging or any time-resolved laser spectroscopy.

Keywords: InGaN; carrier diffusion; carrier dynamics; nanowires; real-space imaging; surface dynamics; ultrafast electron microscopy.