Quantum Electronic Transport of Topological Surface States in β-Ag2Se Nanowire

Jihwan Kim; Ahreum Hwang; Sang-Hoon Lee; Seung-Hoon Jhi; Sunghun Lee; Yun Chang Park; Si-In Kim; Hong-Seok Kim; Yong-Joo Doh; Jinhee Kim; Bongsoo Kim

doi:10.1021/acsnano.5b07368

Quantum Electronic Transport of Topological Surface States in β-Ag2Se Nanowire

ACS Nano. 2016 Apr 26;10(4):3936-43. doi: 10.1021/acsnano.5b07368. Epub 2016 Apr 1.

Authors

Affiliations

¹ Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
² Department of Physics, Pohang University of Science and Technology , Pohang 37673, Korea.
³ Department of Measurement and Analysis, National Nanofab Center , Daejeon 34141, Korea.
⁴ Department of Physics and Photon Science, School of Physics and Chemistry, Gwangju Institute of Science and Technology (GIST) , Gwangju 61005, Korea.
⁵ Korea Research Institute of Standards and Science , Daejeon 34113, Korea.

PMID: 27018892
DOI: 10.1021/acsnano.5b07368

Abstract

Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in β-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These investigations provide evidence of nontrivial surface state about β-Ag2Se TIs that have anisotropic Dirac cones.

Keywords: Aharonov−Bohm oscillation; Shubnikov−de Haas oscillation; anisotropic topological insulator; band inversion; weak antilocalization; β-Ag2Se nanowire.

Publication types

Research Support, Non-U.S. Gov't