Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

B Gupta; I Di Bernardo; P Mondelli; A Della Pia; M G Betti; F Iacopi; C Mariani; N Motta

doi:10.1088/0957-4484/27/18/185601

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

Nanotechnology. 2016 May 6;27(18):185601. doi: 10.1088/0957-4484/27/18/185601. Epub 2016 Mar 21.

Authors

B Gupta¹, I Di Bernardo, P Mondelli, A Della Pia, M G Betti, F Iacopi, C Mariani, N Motta

Affiliation

¹ School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments, Queensland University of Technology, 2 George Street, Brisbane 4001, QLD, Australia.

PMID: 26999014
DOI: 10.1088/0957-4484/27/18/185601

Abstract

We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.

Publication types

Research Support, Non-U.S. Gov't