Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Shengwei Zeng; Weiming Lü; Zhen Huang; Zhiqi Liu; Kun Han; Kalon Gopinadhan; Changjian Li; Rui Guo; Wenxiong Zhou; Haijiao Harsan Ma; Linke Jian; Thirumalai Venkatesan; Ariando

doi:10.1021/acsnano.6b00409

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

ACS Nano. 2016 Apr 26;10(4):4532-7. doi: 10.1021/acsnano.6b00409. Epub 2016 Mar 14.

Authors

Shengwei Zeng^{1

2}, Weiming Lü¹, Zhen Huang¹, Zhiqi Liu¹, Kun Han^{1

2}, Kalon Gopinadhan¹, Changjian Li^{1

3}, Rui Guo^{1

4}, Wenxiong Zhou^{1

2}, Haijiao Harsan Ma^{1

2}, Linke Jian¹, Thirumalai Venkatesan^{1

2

3

4

5}, Ariando^{1

2

3}

Affiliations

¹ NUSNNI-NanoCore, National University of Singapore , Singapore 117411, Singapore.
² Department of Physics, National University of Singapore , Singapore 117542, Singapore.
³ National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS) , 28 Medical Drive, Singapore 117456, Singapore.
⁴ Department of Materials Science and Engineering, National University of Singapore , Singapore 117575, Singapore.
⁵ Department of Electrical and Computer Engineering, National University of Singapore , Singapore 117576, Singapore.

PMID: 26974812
DOI: 10.1021/acsnano.6b00409

Abstract

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (LAO/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm(2)/(V s) are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

Keywords: Ionic liquid; LaAlO3/SrTiO3 interfaces; Shubnikov−de Haas (SdH) oscillation; electric field effect; electronic double layer transistors (EDLT); mobility.

Publication types

Research Support, Non-U.S. Gov't