The electron and spin polarized transport in wide-voltage-ranges through colbaltporphyrin-based molecular junctions

Jue-Fei Cheng; Qiang Yan; Liping Zhou; Qin Han; Lei Gao

doi:10.1063/1.4942923

The electron and spin polarized transport in wide-voltage-ranges through colbaltporphyrin-based molecular junctions

J Chem Phys. 2016 Feb 28;144(8):084707. doi: 10.1063/1.4942923.

Authors

Jue-Fei Cheng¹, Qiang Yan¹, Liping Zhou¹, Qin Han¹, Lei Gao¹

Affiliation

¹ College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China.

PMID: 26931718
DOI: 10.1063/1.4942923

Abstract

The electron and spin polarized transport properties of Co benzene-porphyrin-benzene (BPB) molecule coupled to gold (Au) nanowires in a wide voltage range (0-3.0 V) are investigated. By successively removing the front-end Au atoms, we construct Au nanowires with different molecule-electrode contact symmetries. Multiple negative differential resistance (NDR) peaks emerge at different bias voltage regions. It is found that the low-voltage NDR effect at 0.4 V can only be found in the junctions with S-Au top bindings. High-bias NDR effects intrinsic to central molecule at 2.8 V are observed in all the six structures. In particular, both the electron and spin polarized current-voltage (I-V) curves depend strongly on the contact configurations between Co-BPB molecule and the Au electrodes. And the top-binding may result in spin dependent transport properties and will be the priority selection in the design of molecular devices.

Publication types

Research Support, Non-U.S. Gov't