Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Shengxiang Jiang; Yulong Feng; Zhizhong Chen; Lisheng Zhang; Xianzhe Jiang; Qianqian Jiao; Junze Li; Yifan Chen; Dongsan Li; Lijian Liu; Tongjun Yu; Bo Shen; Guoyi Zhang

doi:10.1038/srep21573

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Sci Rep. 2016 Feb 23:6:21573. doi: 10.1038/srep21573.

Authors

Shengxiang Jiang¹, Yulong Feng¹, Zhizhong Chen¹, Lisheng Zhang¹, Xianzhe Jiang¹, Qianqian Jiao¹, Junze Li¹, Yifan Chen¹, Dongsan Li², Lijian Liu², Tongjun Yu¹, Bo Shen¹, Guoyi Zhang^{1

3}

Affiliations

¹ State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
² Beijing North Microelectronics Co., Ltd., Beijing 100176, China.
³ Sino Nitride Semiconductor Co., Ltd., Dongguan 523500, Guangdong, China.

Abstract

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.

Publication types

Research Support, Non-U.S. Gov't