Metal-oxide-semiconductor field effect transistors (MOSFETs) with various doses of La-incorporated in Hafnium-based dielectrics were characterized to evaluate the effect of La on dielectric and device properties. It is found that the Poole-Frenkel emission model could explain our experimental leakage current conduction mechanism reasonably and barrier heights of localized Poole-Frenkel trap sites increase gradually with increasing La incorporation. Cryogenic measurement (from 100 K to 300 K) of MOSFETs reveals that, as the content of La incorporation in the dielectric increases, the more increase of maximum effective mobility has been found at low temperature. It is mainly attributed to the more reduction of phonon scattering due to higher content of La atoms at the interface of dielectric and channel. Though it is relatively small, the existence of La in dielectric reduces coulomb scattering rate as well.