In this paper, we propose interface engineering between cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dots (QDs) as the emissive layer (EML) and ZnO nanocrystals (NCs) as the electron transport layer (ETL) for reducing the potential barrier in QDs based light-emitting diode (QLED). The n-type ZnO NCs were effective in confining charge to the QDs EML because of their wide band gap. The ZnO NCs were synthesized using a modified sol-gel process and were applied as the ETL in QLED. For comparison, a standard QLED with Tris(8-hydroxyquinolinato)aluminium as the ETL was also fabricated. The standard QLED was shown to have a luminance of 11,240 cd/m2 and current efficiency of 2.3 cd/A. However, QLED with ZnO NCs showed a higher luminance of 28,760 cd/m2 and current efficiency of 4.9 cd/A than the reference structure, and so has more efficient charge transport. Thus, QLED with ZnO NCs not only simplified the process, but also enhanced the luminance and current efficiency by factor of two.