Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Michael D Thompson; Aiyeshah Alhodaib; Adam P Craig; Alex Robson; Atif Aziz; Anthony Krier; Johannes Svensson; Lars-Erik Wernersson; Ana M Sanchez; Andrew R J Marshall

doi:10.1021/acs.nanolett.5b03449

Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Nano Lett. 2016 Jan 13;16(1):182-7. doi: 10.1021/acs.nanolett.5b03449. Epub 2015 Dec 30.

Affiliations

¹ Department of Physics, Lancaster University , Lancaster, LA1 4YB, United Kingdom.
² Electrical and Information Technology, Lund University , Box 118, SE-221 00 Lund, Sweden.
³ Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom.

PMID: 26675242
DOI: 10.1021/acs.nanolett.5b03449

Abstract

Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

Keywords: InAsSb; Nanowires; midwavelength infrared; photodetector.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Indium / chemistry
Microscopy, Electron, Scanning
Nanowires / chemistry*
Nanowires / ultrastructure
Semiconductors*
Silicon / chemistry*
Zinc / chemistry

Substances

Indium
Zinc
Silicon