The electrical performance of highly crystalline monolayer MoS2 is remarkably enhanced by a self-limited growth strategy on octadecyltrimethoxysilane self-assembled monolayer modified SiO2 /Si substrates. The scattering mechanisms in low-κ dielectric, including the dominant charged impurities, acoustic deformation potentials, optical deformation potentials), Fröhlich interaction, and the remote interface phonon interaction in dielectrics, are quantitatively analyzed.
Keywords: MoS2; OTMS; charged impurities; scattering; self-limited growth.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.