On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors

Takafumi Uemura; Cedric Rolin; Tung-Huei Ke; Pavlo Fesenko; Jan Genoe; Paul Heremans; Jun Takeya

doi:10.1002/adma.201503133

On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors

Adv Mater. 2016 Jan 6;28(1):151-5. doi: 10.1002/adma.201503133. Epub 2015 Nov 6.

Authors

Takafumi Uemura^{1

2}, Cedric Rolin³, Tung-Huei Ke³, Pavlo Fesenko³, Jan Genoe³, Paul Heremans³, Jun Takeya^{1

2}

Affiliations

¹ Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
² The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan.
³ imec, Kapeldreef 75, B-3001, Leuven, Belgium.

PMID: 26542747
DOI: 10.1002/adma.201503133

Abstract

Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.

Keywords: carrier mobility; contact resistance; field-effect mobility; organic transistors.