Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic-Functionalized Suspended Gate Electrodes

Yaping Zang; Fengjiao Zhang; Dazhen Huang; Chong-an Di; Daoben Zhu

doi:10.1002/adma.201503542

Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic-Functionalized Suspended Gate Electrodes

Adv Mater. 2015 Dec 22;27(48):7979-85. doi: 10.1002/adma.201503542. Epub 2015 Nov 2.

Authors

Yaping Zang^{1

2}, Fengjiao Zhang^{1

2}, Dazhen Huang^{1

2}, Chong-an Di¹, Daoben Zhu¹

Affiliations

¹ Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
² University of Chinese Academy of Sciences, Beijing, 100049, P.R. China.

PMID: 26523840
DOI: 10.1002/adma.201503542

Abstract

Utilizing a magnetic-functionalized suspended gate with combined features of outstanding conductivity, flexibility, and magnetic properties, flexible magnetic sensor based on an organic field-effect transistor (OFET), with a high sensitivity of 115.2% mT(-1) is demonstrated. Gate engineering enables the sensing devices to possess promising applications for flexible touchless switches and spatiallyresolved magnetic-imaging elements.

Keywords: functional composites; magnetic sensors; organic transistors; suspended gates, flexible electronics.