A mercury(II) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

Tsuyoshi Minami; Yui Sasaki; Tsukuru Minamiki; Petr Koutnik; Pavel Anzenbacher Jr; Shizuo Tokito

doi:10.1039/c5cc07893h

A mercury(II) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

Chem Commun (Camb). 2015 Dec 28;51(100):17666-8. doi: 10.1039/c5cc07893h.

Authors

Tsuyoshi Minami¹, Yui Sasaki¹, Tsukuru Minamiki¹, Petr Koutnik², Pavel Anzenbacher Jr², Shizuo Tokito¹

Affiliations

¹ Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan. tminami@yz.yamagata-u.ac.jp.
² Department of Chemistry and Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403, USA.

PMID: 26463465
DOI: 10.1039/c5cc07893h

Abstract

Herein, we report an organic field effect transistor (OFET) with an extended-gate modified by an artificial receptor for the detection of mercury(II) ions (Hg(2+)) in water. The sensor device is easy to fabricate, reusable, disposable, and portable. Thus OFET sensors could be applied for low-cost on-site detection of Hg(2+).

Publication types

Research Support, Non-U.S. Gov't