Highly robust transparent and conductive gas diffusion barriers based on tin oxide

Andreas Behrendt; Christian Friedenberger; Tobias Gahlmann; Sara Trost; Tim Becker; Kirill Zilberberg; Andreas Polywka; Patrick Görrn; Thomas Riedl

doi:10.1002/adma.201502973

Highly robust transparent and conductive gas diffusion barriers based on tin oxide

Adv Mater. 2015 Oct 21;27(39):5961-7. doi: 10.1002/adma.201502973. Epub 2015 Aug 27.

Authors

Andreas Behrendt¹, Christian Friedenberger², Tobias Gahlmann¹, Sara Trost¹, Tim Becker¹, Kirill Zilberberg¹, Andreas Polywka³, Patrick Görrn³, Thomas Riedl¹

Affiliations

¹ Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany.
² Electronic Materials and Nanoelectronics, Ruhr-Universität Bochum, Universitätsstr. 150, 44801, Bochum, Germany.
³ Chair of Large Area Optoelectronics, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal, 42119, Germany.

PMID: 26310881
DOI: 10.1002/adma.201502973

Abstract

Transparent and electrically conductive gas diffusion barriers are reported. Tin oxide (SnOx ) thin films grown by atomic layer deposition afford extremely low water vapor transmission rates (WVTR) on the order of 10(-6) g (m(2) day)(-1) , six orders of magnitude better than that established with ITO layers. The electrical conductivity of SnOx remains high under damp heat conditions (85 °C/85% relative humidity (RH)), while that of ZnO quickly degrades by more than five orders of magnitude.

Keywords: atomic layer deposition; organic electronics; tin oxide; transparent and conductive gas diffusion barriers; transparent electrodes.