Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Jui-Yuan Chen; Chun-Wei Huang; Chung-Hua Chiu; Yu-Ting Huang; Wen-Wei Wu

doi:10.1002/adma.201502758

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

Adv Mater. 2015 Sep 9;27(34):5028-33. doi: 10.1002/adma.201502758. Epub 2015 Jul 20.

Authors

Jui-Yuan Chen¹, Chun-Wei Huang¹, Chung-Hua Chiu¹, Yu-Ting Huang¹, Wen-Wei Wu¹

Affiliation

¹ Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan.

PMID: 26193454
DOI: 10.1002/adma.201502758

Abstract

The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.

Keywords: in situ TEM; memristors; nanofilaments; resistive switching; valence change memories (VCM).