Control of band filling or doping of molecular (semi)conductors can be performed by substitutional insertion of molecules with a similar shape but a different electron count, with one more or one less electron. This strategy has been explored here within the semiconducting, single-component, radical gold dithiolene complex [AuOC4] bearing para-butoxyphenyl substituents. Alloying with the corresponding neutral nickel dithiolene complex [NiOC4] lacking one electron afforded a complete isostructural series [NiOC4]1-x[AuOC4]x, spanning the whole composition range from x = 0 to x = 1 by 0.1 increments, further characterized by X-ray diffraction and EDX analyses. Magnetic susceptibility data confirm the antiferromagnetic interactions between neighboring radical gold dithiolene complexes. The electrical conductivity increases exponentially with the x gold fraction, while the activation energy remains constant in the more conducting, gold-rich samples. This behavior is tentatively assigned to the tunneling barriers of variable width (with x) but of constant height, separating more conducting gold-rich segments. Comparison of redox potentials for the 1e(-) oxidation and reduction of both [NiOC4] and [AuOC4] dithiolene complexes indicates that the [NiOC4] nickel complex does not act as a dopant for the radical [AuOC4] complex.